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Title:
POLYSILOXANE AND POSITIVE PHOTORESIST COMPOSITION
Document Type and Number:
Japanese Patent JP2000219743
Kind Code:
A
Abstract:

To obtain a positive photoresist composition which gives a rectangular photoresist having high sensitivity and resolution by forming an alkali-soluble polysiloxane having specific structural units.

The alkali-soluble polysiloxane has a wt. average mol.wt. of 500-200,000 and contains 10-100 mol% structural units represented by formula I. The photoresist composition contains (A) a polysiloxane containing an alkali- soluble polysiloxane, (B) 0.001 to 40 wt.% compound which, when exposed to light, is decomposed and generates an acid (e.g. an oxazole derivative or an s-triazine derivative), and (C) 5-50 wt.% phenolic compound having part of the phenolic hydroxy groups protected by acid-decomposable groups. In the formula, n is 1-6; L is -A-OCO-, -A-NHCO-, -A-CONH- or the like; A is a single bond or arylene; X is a single bond or a divalent linking group; Z is a group represented by formula II or III; Y is H, an alkyl, aryl or the like; i is 1-3; and m is 1-3.


Inventors:
Mizutani, Kazuyoshi
Yasunami, Shoichiro
Application Number:
JP1999000024236
Publication Date:
August 08, 2000
Filing Date:
February 01, 1999
Export Citation:
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Assignee:
FUJI PHOTO FILM CO LTD
International Classes:
H01L21/027; C08G77/14; C08G77/26; C08K5/00; C08K5/10; C08K5/13; G03F7/004; G03F7/075; (IPC1-7): C08G77/14; C08K5/02; C08K5/3492; C08K5/36; C08K5/41; C08K5/42; C08L83/06; G03F7/004; G03F7/039; G03F7/075; H01L21/027