Title:
多孔質体溶浸方法
Document Type and Number:
Japanese Patent JP4889843
Kind Code:
B2
Abstract:
A mixture is formed that comprises up to about 10 wt% boron nitride and silicon. A body comprising a component that is wetted by or reacts with silicon is contacted with the mixture and the contacted body is infiltrated with silicon from the mixture.
Inventors:
Gregory Scott Coman
Application Number:
JP31321099A
Publication Date:
March 07, 2012
Filing Date:
November 04, 1999
Export Citation:
Assignee:
GENERAL ELECTRIC COMPANY
International Classes:
B22F3/26; C04B35/573; C04B41/50; C04B41/85; C23C10/20; C23C10/44
Foreign References:
| US4737328 |
Attorney, Agent or Firm:
Arakawa Satoshi
Hirokazu Ogura
Toshihisa Kurokawa
Hirokazu Ogura
Toshihisa Kurokawa