Title:
POROUS GETTERING BOARD, ITS MANUFACTURE AND SILICON BOARD PRESERVING METHOD USING POROUS GETTERING BOARD
Document Type and Number:
Japanese Patent JP3028082
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To remove gas pollutants generated from the building materials of a clean room in a semiconductor device manufacture process and adsorbed by the surface of a silicon board.
SOLUTION: A porous layer 10 is formed on a silicon board 8. The porous layer is filled with impurity, in which a conductive type opposite to the board occurs, and a p-n junction 12 is formed in the layer. Then, the distribution of various potentials is given to the surface and gettering ability, corresponding to the various electronic affinities of gas molecules by cleaning and activating the surface of the porous layer. The silicon board is stored in a preservation container with the material, at the time of preserving it in the clean room.
Inventors:
Makoto Kitakata
Application Number:
JP16625697A
Publication Date:
April 04, 2000
Filing Date:
June 23, 1997
Export Citation:
Assignee:
NEC
International Classes:
H01L21/322; H01L21/02; (IPC1-7): H01L21/322; H01L21/02
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)
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