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Title:
POROUS SILICON MATERIAL, ELECTRIC STORAGE DEVICE AND METHOD FOR MANUFACTURING POROUS SILICON MATERIAL
Document Type and Number:
Japanese Patent JP2023167229
Kind Code:
A
Abstract:
To provide a material containing Si in which the lowering of charge/discharge characteristics is more reduced.SOLUTION: A porous silicon material of the present disclosure is in a particulate state. Si and a transition metal silicide containing a transition metal element M coexist in a skeleton part. The Si phase in the whole particle accounts for 55 mass% or more, and the transition metal silicide accounts for 1 mass% or more and 45 mass% or less. The porous silicon material contains 20 vol.% or more of pores of 1 μm or less by a mercury indentation method, and has a two-layer structure in which the transition metal silicide is segregated in either a core part of the center or a shell part of the surface layer.SELECTED DRAWING: Figure 9

Inventors:
MATSUBARA MASAHARU
SUZUKI RYO
NAGAMEGURI NAOYUKI
OISHI KEIICHIRO
KAWAURA HIROYUKI
KONDO YASUHITO
WASEDA TETSUYA
YOSHIDA ATSUSHI
UCHIYAMA TAKAYUKI
Application Number:
JP2022078245A
Publication Date:
November 24, 2023
Filing Date:
May 11, 2022
Export Citation:
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Assignee:
TOYOTA CENTRAL RES & DEV
TOYOTA MOTOR CORP
International Classes:
C01B33/06; C01B33/02; H01G11/24; H01G11/26; H01G11/30; H01G11/62; H01G11/86; H01M4/36; H01M4/38
Attorney, Agent or Firm:
Patent Attorney Corporation ITEC International Patent Office



 
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