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Patent Searching and Data


Title:
POSITIVE PHOTORESIST COMPOSITION CONTAINING POLYMER CONTAINING FLUOROSULFONAMIDO GROUP, AND ITS USAGE
Document Type and Number:
Japanese Patent JP2005196209
Kind Code:
A
Abstract:

To provide a positive photoresist composition that exhibits excellent solubility in an aqueous base developer, and its usage.

The positive photoresist composition contains a radiation sensitive acid generator and a polymer, wherein this polymer can contain a first repeating unit derived from a sulfonamide monomer containing a fluorosulfonamido functional group and a second repeating unit that can contain an acid-labile pendant moiety. This positive photoresist composition can further contain at least one selected from a solvent, a quenching agent and a surfactant. A pattern formed photoresist layer produced from this positive photoresist composition is formed on a substrate, this positive photoresist layer is exposed with an irradiation pattern for imaging, and parts exposed with the irradiation pattern for imaging in the positive photoresist layer are removed, whereby the corresponding pattern formed substrate can be exposed and is prepared for subsequent processing of semiconductor device production.


Inventors:
LI, Wenjie
Varanasi, Pushkara R.
Application Number:
JP2005000000960
Publication Date:
July 21, 2005
Filing Date:
January 05, 2005
Export Citation:
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Assignee:
INTERNATL BUSINESS MACH CORP
International Classes:
C08F220/18; C08F220/28; C08F220/38; C08F232/04; G03C1/76; G03F7/004; G03F7/039; G03F7/20; H01L21/027; (IPC1-7): G03F7/039; C08F220/18; C08F220/28; C08F220/38; C08F232/04; G03F7/004; H01L21/027
Attorney, Agent or Firm:
坂口 博
市位 嘉宏
上野 剛史