Title:
POSITIVE PHOTORESIST COMPOSITION FOR EXPOSURE WITH FAR ULTRAVIOLET RAY
Document Type and Number:
Japanese Patent JP2002251011
Kind Code:
A
Abstract:
To provide a positive photoresist composition for exposure with far UV excellent in aptness for a halftone phase shift mask in the production of a semiconductor device and to provide a positive photoresist composition for exposure with far UV excellent also in sensitivity and profile.
Each of the positive photoresist compositions contains (A) a polymer having a group which is decomposed by the action of an acid having a specified structure, (B) a specified dissolution inhibitor and (C) an imidosulfonate acid generating agent.
Inventors:
SATO KENICHIRO
UENISHI KAZUYA
UENISHI KAZUYA
Application Number:
JP2001048782A
Publication Date:
September 06, 2002
Filing Date:
February 23, 2001
Export Citation:
Assignee:
FUJI PHOTO FILM CO LTD
International Classes:
G03F7/039; C08F222/04; C08F222/10; C08F222/38; C08F222/40; C08K5/00; C08L35/00; C08L45/00; G03F7/004; H01L21/027; (IPC1-7): G03F7/039; C08F222/04; C08F222/10; C08F222/38; C08F222/40; C08K5/00; C08L35/00; C08L45/00; G03F7/004; H01L21/027
Attorney, Agent or Firm:
Shohei Oguri (4 outside)
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