POSITIVE PHOTORESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN

Title:

POSITIVE PHOTORESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN

Document Type and Number:

Japanese Patent JP2004333548

Kind Code:

A

Abstract:

To provide a positive photoresist composition which has high etching durability, with which high resolution can be obtained, and with which a fine pattern can be formed in an exposure process using an electron beam (EB), and to provide a method of forming a resist pattern by using the positive photoresist composition.

The positive photoresist composition for the EB comprises: a resin component (A) which increases the solubility with an alkali by the effect of an acid; an acid generating agent component (B) which generates an acid by exposure; and an organic solvent (C). The component (A) consists of a copolymer containing a first structural unit (a1) derived from hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate having an alcoholic hydroxyl group. A part of the hydroxyl group in the structural unit (a1) and of the alcoholic hydroxyl group in the structural unit (a2) is protected by an acid dissociating solubility inhibitor group.

Inventors:

HOJO TAKUMA
ISHIKAWA KIYOSHI
NAKAMURA TAKESHI
MATSUMIYA YU

Application Number:

JP2003125241A

Publication Date:

November 25, 2004

Filing Date:

April 30, 2003

Export Citation:

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Assignee:

TOKYO OHKA KOGYO CO LTD

International Classes:

C08F212/08; C08F212/14; C08F220/28; G03F7/004; G03F7/039; G03F7/40; H01L21/027; G03F7/20; (IPC1-7): G03F7/039; C08F212/08; C08F212/14; C08F220/28; G03F7/004; G03F7/40; H01L21/027

Attorney, Agent or Firm:

Sumio Tanai
Masatake Shiga
Masakazu Aoyama
Suzuki Mitsuyoshi
Noriko Yanai

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