To provide a positive photoresist composition excellent in resist shape and dry etching resistance and excellent also in suitability to halftone exposure in the production of a semiconductor device.
The positive photoresist composition contains a compound which generates an acid when irradiated with active light or radiation, resin containing acid decomposable alicyclic olefin repeating units with a specified structure, anhydride repeating units with a specified structure and acid decomposable acrylic repeating units with a specified structure and having a dissolution rate in an alkali developing solution increased by the action of the acid and a compound having at least one group which is decomposed by the action of the acid to form a group soluble in the alkali developing solution after the decomposition or to increase its water solubility by the decomposition.
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