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Patent Searching and Data


Title:
POSITIVE PHOTORESIST COMPOSITION
Document Type and Number:
Japanese Patent JP2002214787
Kind Code:
A
Abstract:

To provide a positive photoresist composition excellent in resist shape and dry etching resistance and excellent also in suitability to halftone exposure in the production of a semiconductor device.

The positive photoresist composition contains a compound which generates an acid when irradiated with active light or radiation, resin containing acid decomposable alicyclic olefin repeating units with a specified structure, anhydride repeating units with a specified structure and acid decomposable acrylic repeating units with a specified structure and having a dissolution rate in an alkali developing solution increased by the action of the acid and a compound having at least one group which is decomposed by the action of the acid to form a group soluble in the alkali developing solution after the decomposition or to increase its water solubility by the decomposition.


Inventors:
FUJIMORI TORU
Application Number:
JP2001013298A
Publication Date:
July 31, 2002
Filing Date:
January 22, 2001
Export Citation:
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Assignee:
FUJI PHOTO FILM CO LTD
International Classes:
G03F7/039; C08K5/00; C08K5/54; C08K5/541; C08L33/00; C08L35/00; C08L45/00; G03F7/004; H01L21/027; (IPC1-7): G03F7/039; C08K5/00; C08K5/541; C08L33/00; C08L35/00; C08L45/00; G03F7/004; H01L21/027
Attorney, Agent or Firm:
Shohei Oguri (4 outside)