To provide a positive resist composition having an enhanced etching resistance and an excellent resolution and providing an excellent pattern profile on a substrate boundary face, in photolithography for fine processing, and particularly in lithography adopting, as an exposure source, KrF laser, extreme ultraviolet rays, electron beam, X-rays, or the like, and to provide a pattern forming method utilizing the positive resist composition.
The resist composition includes: (A) a base resin, which includes acidic functional groups protected by acid labile groups, respectively, and is insoluble or hardly soluble in alkali, and which is turned to be soluble in alkali upon elimination of the acid labile groups; (B) an acid generator; and (C) a nitrogen-containing compound as a basic component. The base resin contains repeating units each represented by general formula (1), contains at least one or more kinds of repeating units each represented by general formula (2) and/or (3). The base resin contains the repeating units represented by general formulae (1), (2) and (3), respectively, at a sum ratio of 70 mol% or more relative to a total amount of all repeating units constituting the base resin.
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MASUNAGA KEIICHI
DOMON HIROMASA
WATANABE SATOSHI
| JP2006030232A | 2006-02-02 | |||
| JP2010122579A | 2010-06-03 | |||
| JP2010155824A | 2010-07-15 | |||
| JP2010164933A | 2010-07-29 | |||
| JP2002244297A | 2002-08-30 | |||
| JP2008096951A | 2008-04-24 | |||
| JP2003122011A | 2003-04-25 |
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