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Title:
POSITIVE RESIST COMPOSITION
Document Type and Number:
Japanese Patent JP2001290276
Kind Code:
A
Abstract:

To provide a positive resist composition excellent in sensitivity and resolving power, ensuring excellent resolving power and pattern profile even if time passes considerably until after-heating after exposure and having small density dependency in microphotofabrication using far ultraviolet light, particularly ArF excimer laser light.

The positive resist composition contains two or more photo-acid generating agents each with a specified structure and a polymer having repeating structural units with different specified structures and also having a group which is decomposed by the action of an acid.


Inventors:
Kodama, Kunihiko
Sato, Kenichiro
Aoso, Toshiaki
Application Number:
JP2000000383801
Publication Date:
October 19, 2001
Filing Date:
December 18, 2000
Export Citation:
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Assignee:
FUJI PHOTO FILM CO LTD
International Classes:
G03F7/039; C07C309/06; C07C381/12; C08F220/18; C08F220/30; C08F222/00; C08F232/04; C08K5/02; C08K5/16; C08K5/36; C08L33/00; C08L35/00; C08L45/00; C08L83/04; C08L101/00; G03F7/004; H01L21/027; G03F7/039; C07C309/00; C07C381/00; C08F220/00; C08F222/00; C08F232/00; C08K5/00; C08L33/00; C08L35/00; C08L45/00; C08L83/00; C08L101/00; G03F7/004; H01L21/02; (IPC1-7): G03F7/039; C07C309/06; C08F220/18; C08F220/30; C08F222/00; C08F232/04; C08K5/02; C08K5/16; C08K5/36; C08L33/00; C08L35/00; C08L45/00; C08L83/04; C08L101/00; G03F7/004; H01L21/027