To provide a positive resist composition having satisfactory transmittance at the time of using an exposure light source of ≤160 nm, concretely F2 excimer laser light (157 nm) and improved in line edge roughness and development defects.
The positive resist composition comprises (A) a compound which generates an acid upon irradiation with an actinic ray or a radiation, (B) an organic fluoropolymer which has at least one repeating structural unit selected from the group of repeating structural units represented by formulae (I)-(II) and a repeating structural unit represented by formula (III) and whose solubility in an alkali developer is increased by the action of an acid and (C) a solvent. In the formula (I), R11-R16 may be the same or different and are each H, F or fluoroalkyl and X1 is a group which is decomposed by the action of an acid. In the formula (II), R3 is H or a group which is released by the action of an acid. In the formula (III), R1 is H, F, Cl, Br, cyano or trifluoromethyl and R41-R46 are each H, F or fluoroalkyl.
KANNA SHINICHI
SASAKI TOMOYA
