To provide a positive resist composition suitable for use under an exposure light source of ≤250 nm, particularly F2 excimer laser light (157 nm), and to specifically provide a positive resist composition which exhibits satisfactory transmittance when the light source of 157 nm is used and is excellent in various properties such as affinity for a developer and image forming property.
The positive resist composition contains (A) a resin having a specified repeating unit derived from a vinyl ether having a fluorine atom or a fluoroalkyl group in the α-position and a specified repeating unit derived from a vinyl ether and having solubility in an alkali developer increased by the action of an acid and (B) a compound which generates an acid upon irradiation with an active ray or radiation.
MIZUTANI KAZUYOSHI
Hironori Honda
Toshimitsu Ichikawa
Takeshi Takamatsu
Yuriko Hamada