To prevent the occurrence of development defects and a scum by incorporating a compound which generates an acid when irradiated with active light or the like, a polymer having specified repeating units and a group which is decomposed by the action of the acid and a compound which is decomposed by the action of the acid to generate sulfonic acid.
The positive type photoresist composition contains a compound which generates an acid when irradiated with active light or the like, a polymer having repeating units of one of formulae Ia and Ib, repeating units of formula II and a group which is decomposed by the action of the acid and a compound which is decomposed by the action of the acid to generate sulfonic acid. In the formula Ia, R1 and R2 are each H, cyano, hydroxyl or the like, X is O, S, -NH- or the like and A is a single bond or a divalent combining group. In the formula Ib, Z2 is -O- or the like. In the formula II, R11 and R12 are each H, cyano, halogen or alkyl which may have a substituent and Z1 is an atomic group containing combined two carbon atoms (C-C) for forming an alicyclic structure which may have a substituent.
KODAMA KUNIHIKO
AOSO TOSHIAKI
