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Title:
POSITIVE TYPE PHOTORESIST COMPOSITION FOR EXPOSURE WITH FAR ULTRAVIOLET RAY
Document Type and Number:
Japanese Patent JP2000292926
Kind Code:
A
Abstract:

To prevent the occurrence of development defects and a scum by incorporating a compound which generates an acid when irradiated with active light or the like, a resin which contains specified repeating units and is decomposed by the action of the acid to increase its alkali solubility and a compound which is decomposed by the action of the acid to generate sulfonic acid.

The positive type photoresist composition contains a compound which generates an acid when irradiated with active light or radiation, a resin which contains one of repeating units of formulae I and II and is decomposed by the action of the acid to increase its alkali solubility and a compound which is decomposed by the action of the acid to generate sulfonic acid. In the formulae I and II, R1-R8 may be mutually the same or different and are each H, an alkyl which may have a substituent, cyclic hydrocarbon which may have a substituent, halogen, cyano or the like, X is a divalent bonding group selected from O, S, etc., A is a single bond or a divalent group obtained by combining groups selected from among alkylene, substituted alkylene, ether, etc., and R9 is an alkyl which may have a substituent or the like.


Inventors:
SATO KENICHIRO
KODAMA KUNIHIKO
AOSO TOSHIAKI
Application Number:
JP9537499A
Publication Date:
October 20, 2000
Filing Date:
April 01, 1999
Export Citation:
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Assignee:
FUJI PHOTO FILM CO LTD
International Classes:
H01L21/027; C08F32/00; C08K5/00; C08L45/00; G03F7/004; G03F7/039; (IPC1-7): G03F7/039; C08F32/00; C08K5/00; C08L45/00; G03F7/004; H01L21/027
Attorney, Agent or Firm:
Tadashi Hagino (4 outside)