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Title:
POSITIVE TYPE PHOTORESIST COMPOSITION
Document Type and Number:
Japanese Patent JP2002049154
Kind Code:
A
Abstract:

To provide a positive type photoresist composition having good resolution even in the case of a contact hole pattern and a trench pattern in the production of a semiconductor device.

The positive type photoresist composition contains a resin containing specified repeating structural units and having a dissolution rate in an alkali developing solution increased by the action of an acid, a compound which generates the acid when irradiated with active light or radiation and a specified dissolution inhibiting compound.


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Inventors:
NAKAO HAJIME
SATO KENICHIRO
Application Number:
JP2000233146A
Publication Date:
February 15, 2002
Filing Date:
August 01, 2000
Export Citation:
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Assignee:
FUJI PHOTO FILM CO LTD
International Classes:
G03F7/039; C08F232/00; C08K5/00; C08K5/10; C08K5/17; C08K5/372; C08K5/54; C08K5/541; C08L45/00; G03F7/004; H01L21/027; (IPC1-7): G03F7/039; C08F232/00; C08K5/00; C08K5/10; C08K5/17; C08K5/372; C08K5/541; C08L45/00; G03F7/004; H01L21/027
Attorney, Agent or Firm:
Shohei Oguri (4 outside)



 
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