Title:
POSITIVE TYPE PHOTORESIST COMPOSITION
Document Type and Number:
Japanese Patent JP3967047
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a positive type photoresist composition having high sensitivity and high resolving power of ≤0.2 μm in the production of a semiconductor device, having a rectangular shape and less liable to cause a dimensional shift in pattern transfer to a lower layer in an oxygen plasma etching step when the composition is used as the upper layer resist of a two-layer resist system.
SOLUTION: The positive type photoresist composition contains a polysiloxane containing at least a siloxane structural unit of formula I [where L is a single bond or arylene, A is an aromatic ring or an alicyclic structure which may have a substituent and (n) is an integer of 1-6] and a siloxane structural unit having a group which is decomposed by an acid and generates an alkali-soluble group.
Inventors:
Kazuyoshi Mizutani
Shoichiro Anami
Shoichiro Anami
Application Number:
JP27533299A
Publication Date:
August 29, 2007
Filing Date:
September 28, 1999
Export Citation:
Assignee:
FUJIFILM Corporation
International Classes:
G03F7/075; H01L21/027; G03F7/004; G03F7/039; (IPC1-7): G03F7/039; G03F7/075; H01L21/027
Domestic Patent References:
| JP9087391A | ||||
| JP6011838A | ||||
| JP4188102A | ||||
| JP3044645A | ||||
| JP62276543A |
Attorney, Agent or Firm:
Shohei Oguri
Hironori Honda
Toshimitsu Ichikawa
Takeshi Takamatsu
Kiyozumi Yazawa
Hironori Honda
Toshimitsu Ichikawa
Takeshi Takamatsu
Kiyozumi Yazawa
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