PURPOSE: To obtain a mateial forming with high sensitivity a sharp image suitable for forming a micropattern for LSI or the like, by adding a specified quaternary ammonium salt to a positive type radiation sensitive material as a sensitizing agent.
CONSTITUTION: A quaternary ammonium salt represented by R4NX, R being alkyl and X being halogen, is added to a positive type radiation sensitive material by 1W30wt% of the total material as a sensitizer of 500,000W1,000,000mol.wt. polymer consisting essentially of polymethyl methacrylate (PMMA). This material is dissolved in methyl ethyl keton or the lilke, and a chromium layer vapor- deposited on a glass substrate is coated with said soln. to form a thin film of said material. Thereon, a desired pattern is exposed to radiation, such as electron beams, and developed with a methyl acetate-isoamyl acetate type developing solvent, thus permitting a sharp image to be obtained with high sensitivity by short-time exposure.
YAMAZAKI SHIYUUGO
KATOU HITOSHI
| JPS6425055A | 1989-01-27 | |||
| JPS6425054A | 1989-01-27 |