PURPOSE: To obtain a composition appropriate for producing a ferroelectric film by composing it of a solution containing a specified product containing a monovalent metal ion, tantalum, niobium and oxygen as components.
CONSTITUTION: This is the composition composed of the solution containing the product shown by the formula, in the formula, M represents the monovalent metal ion other than K+, (y) represents 0.02 to 0.20 and (x) represents 0.05 to 0.95. In order to produce the ferroelectric film, concerning this composition, it is preferable (x) is 0.4 to 0.6 in the composition (solid solution). This composition is composed of 5-95 mol.% KNbO3 and 95-5 mol.% KTaO3, for example, and a pyro-electric sensor or ferroelectric memory device containing KTaO3 crystals coated with an epitactic film containing 2-20 mol.% monovalent metals other than K can be obtained.
RORANTO GUTSUTOMAN
YURUGU HIYURIGEERU
