Title:
電力変換装置
Document Type and Number:
Japanese Patent JP6828425
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To prevent breakage of a pressure contact type semiconductor device at a time of a short circuit failure of a semiconductor element included in the pressure contact type semiconductor device.SOLUTION: According to one aspect, a controller of pressure-contact type semiconductor devices 4a, 4b including a plurality of semiconductor elements 8to 8connected in parallel includes a controller 32 that turns on all of the plurality of semiconductor elements 8to 8when detecting a short circuit of any one of the plurality of semiconductor elements 8to 8.SELECTED DRAWING: Figure 2
Inventors:
Kappa Kyouhei
Application Number:
JP2016251370A
Publication Date:
February 10, 2021
Filing Date:
December 26, 2016
Export Citation:
Assignee:
Toshiba Mitsubishi Electric Industrial Systems Co., Ltd.
International Classes:
H02M1/08; H02M1/00; H02M7/12; H02M7/48; H02M7/49; H03K17/00
Domestic Patent References:
| JP2007184999A | ||||
| JP2005151664A | ||||
| JP2015162999A | ||||
| JP2016214083A | ||||
| JP2016208706A |
Foreign References:
| US20160261180 |
Attorney, Agent or Firm:
Mamoru Takada
Hideki Takahashi
Hidekazu Onishi
Atsushi Takeda
Tokuyuki Umeda
Dai Takahashi
Hideki Takahashi
Hidekazu Onishi
Atsushi Takeda
Tokuyuki Umeda
Dai Takahashi