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Title:
電力デバイス及び電力デバイスの制御方法
Document Type and Number:
Japanese Patent JP4658141
Kind Code:
B2
Abstract:
An RF power device that includes a transistor with a compact impedance transformation circuit, where the transformation circuit includes a lumped element CLC analog transmission line and an associated embedded directional bilateral RF power sensor that is inductively coupled to the transmission line to provide detection of direct and reflected power independently with high directivity.

Inventors:
Igor, Brednov
Application Number:
JP2007547738A
Publication Date:
March 23, 2011
Filing Date:
December 15, 2005
Export Citation:
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Assignee:
NXP B.V.
International Classes:
H01P5/18; H03F3/24; H03H7/48
Domestic Patent References:
JP2005527167A
JP2001230640A
Foreign References:
US5994965
US20040100325
US20030155971
US4547746
US4122400
Attorney, Agent or Firm:
Kenji Yoshitake
Hidetoshi Tachibana
Takeshi Sekine
Takahashi