Title:
POWER MOSFET
Document Type and Number:
Japanese Patent JP3614386
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a MOSFET by suppressing an external resistance part and a thermal resistance.
SOLUTION: An electrode pad 21 for a drain of a pellet 10 in which a MOSFET circuit is formed is connected to a header 41 by a high melting point solder. An electrode pad 19 for a gate and an electrode pad 30 for a source of the pellet 10 are respectively connected to inner leads 36 and 37 by connectors 25 and 26 made of low melting point solder bumps. A plurality of branches are provided at the lead 37 for the source, and connected to the pad 20 for the source by a plurality of connectors 26 formed at the branches. The source electrode is connected to the inner leads by a plurality of bump connectors and hence the source electrode of a large current is reduced, and hence its external resistance part can be effectively suppressed. Since a thermal stress can be absorbed by the branches of the inner leads for the source, the connectors made of the plurality of the bumps arranged at the branches can be suitably formed at the source electrode.
Inventors:
Tomio Yamada
Moto Murakami
Moto Murakami
Application Number:
JP2001252530A
Publication Date:
January 26, 2005
Filing Date:
August 23, 1994
Export Citation:
Assignee:
Renesas Technology Corp.
International Classes:
H01L21/28; H01L21/3205; H01L23/48; H01L23/52; (IPC1-7): H01L23/48
Domestic Patent References:
| JP8064634A | ||||
| JP56115542A |
Attorney, Agent or Firm:
Kajiwara Tatsuya