To provide a power semiconductor device wherein an insulation distance can be secured fully between a heat-radiating means and an external terminal, when the heat radiating means is fitted as a power semiconductor device having a power element and a control circuit stored in a single package, and a heat radiator.

On the top surface of the power semiconductor device 10a, projections 11a and 11b are formed which project upward along the circumferential edges of both sides. Consequently, a creep distance from an external terminal 13 to cooling fins (radiator) fitted to the top surface of the power semiconductor device 10a can be made long and insulation can be improved.