Title:
Power semiconductor device
Document Type and Number:
Japanese Patent JP6150866
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a power semiconductor device with a good insulation heat radiation property and a good productivity.SOLUTION: A power semiconductor device includes: a heat sink with a convex part; and a power semiconductor module that has an insulation member provided on a convex part upper surface of the convex part of the heat sink, a lead frame placed on the insulation member, a power semiconductor element placed on the lead frame, a mold resin provided in a state where the power semiconductor element and the lead frame are encapsulated, and a resin spacer provided between the mold resin and the insulation member in a state contacted between an outer periphery of the convex part upper surface of the heat sink and the lead frame. The power semiconductor module is connected with the heat sink via the insulation member kept at a constant thickness by means of the resin spacer.SELECTED DRAWING: Figure 3
Inventors:
Tatsuya Fukase
Masanori Kato
Nobuhiko Fujita
Masanori Kato
Nobuhiko Fujita
Application Number:
JP2015215397A
Publication Date:
June 21, 2017
Filing Date:
November 02, 2015
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L25/07; H01L23/29; H01L25/18
Domestic Patent References:
| JP2013026361A | ||||
| JP2006237503A | ||||
| JP11243166A | ||||
| JP2001036005A | ||||
| JP9283661A | ||||
| JP4123441A |
Foreign References:
| WO2012108011A1 |
Attorney, Agent or Firm:
Masuo Oiwa
Takenaka Ikuo
Keigo Murakami
Kenji Yoshizawa
Takenaka Ikuo
Keigo Murakami
Kenji Yoshizawa