Title:
Power semiconductor device
Document Type and Number:
Japanese Patent JP6336220
Kind Code:
B2
Abstract:
An object of the present invention to provide a technique which can put flexibility into positions, positional relationships, and sizes of constituent elements. A power semiconductor device includes: a substrate on which a semiconductor chip is disposed; an electrode which has one end fixed to the substrate and stands upright on the substrate; and an insulating case which houses the electrode and has a part opposed to the other end of the electrode. The power semiconductor device includes a conductive nut which is inserted into the case in the part of the case and a conductive component which electrically connects the other end of the electrode and the nut.
More Like This:
Inventors:
Araki Shoko
Yukimasa Hayashida
Ryutaro Date
Yukimasa Hayashida
Ryutaro Date
Application Number:
JP2017553585A
Publication Date:
June 06, 2018
Filing Date:
December 04, 2015
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L25/07; H01L23/04; H01L23/48; H01L25/18; H05K7/06
Domestic Patent References:
| JP9321216A | ||||
| JP2007235004A | ||||
| JP2014112585A |
Attorney, Agent or Firm:
Yoshitake Hidetoshi
Takahiro Arita
Takahiro Arita
Previous Patent: Voice recognition equipment and a voice recognition method
Next Patent: PHYSICAL PROPERTIES SHUTTER DEVICE
Next Patent: PHYSICAL PROPERTIES SHUTTER DEVICE