POWER SEMICONDUCTOR MODULE

Japanese Patent JP2015142059

A

PROBLEM TO BE SOLVED: To provide a power semiconductor module which can cool the high heating part of a transistor element efficiently, and is excellent in the connection reliability of wiring joint.SOLUTION: A power semiconductor module includes a heat sink 1, a circuit board connected with the heat sink 1 via a bonding material, and having the wiring formed on the surface of an insulating substrate 2, a transistor element 5 including a main electrode 6 and a control electrode 7 formed on one surface and a back electrode formed the other surface, where the back electrode is connected with the circuit board via a bonding material, a first conductive member 10 bonded to the main electrode 6 via a bonding material, and wire or ribbon-like connection terminals 11, 12 for electrically connecting the first conductive member 10 and control electrode 7 with other element or the circuit board. The control electrode 7 is arranged at the corner of the main electrode 6, and the first conductive member 10 has a shape of notching the upper part of the first conductive member 10.

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MOTOWAKI NARIHISA
HOZOJI HIROYUKI
MORITA TOSHIAKI
KONNO TETSUTOYO

JP2014015049A

August 03, 2015

January 30, 2014

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HITACHI LTD
HITACHI POWER SEMICONDUCTOR DEVICE LTD

H01L21/60; H01L23/36; H01L25/07; H01L25/18

Manabu Inoue
Yuji Toda
Shigemi Iwasaki

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