Title:
蓄電デバイス
Document Type and Number:
Japanese Patent JP7075717
Kind Code:
B2
Abstract:
The electricity storage device (30) includes: a first oxide semiconductor layer having a first conductivity-type first oxide semiconductor (14); a first charge layer (16) disposed on the first oxide semiconductor layer (14), and composed by including a first insulating material and a first conductivity-type second oxide semiconductor; and a third oxide semiconductor layer (24) disposed on the first charge layer (16). The third oxide semiconductor layer (24) has hydrogen and a second conductivity-type third oxide semiconductor, and a percentage of the hydrogen with respect to a metal constituting the third oxide semiconductor is equal to or greater than 40%. The embodiments provide an electricity storage device capable of increasing an electricity storage capacity per unit volume (weight).
Inventors:
Takashi Tonokawa
Kazuyuki Tsukuni
Takuo Kudo
Kazuyuki Tsukuni
Takuo Kudo
Application Number:
JP2017049544A
Publication Date:
May 26, 2022
Filing Date:
March 15, 2017
Export Citation:
Assignee:
Nippon Micronics Co., Ltd.
International Classes:
H01M4/48; H01M4/52; H01M10/36
Domestic Patent References:
| JP2017059524A | ||||
| JP2016127166A | ||||
| JP2016082125A | ||||
| JP2018022719A | ||||
| JP2017182969A | ||||
| JP2017195283A | ||||
| JP2018037261A |
Foreign References:
| WO2016208116A1 | ||||
| WO2017199618A1 |
Attorney, Agent or Firm:
Hidekazu Miyoshi
Masakazu Ito
Matsunaga Nobuyuki
Masakazu Ito
Matsunaga Nobuyuki