Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
POWER SUPPLY CIRCUIT, POWER SOURCE DEVICE AND MAGNETIC FIELD GENERATION DEVICE
Document Type and Number:
Japanese Patent JP2009098885
Kind Code:
A
Abstract:

To provide a power source device or the like for supplying stable large current to a load.

This power source device 2 has: a power source 10; and a power supply circuit 40 supplying power to the load 20 from the power source 10. The power supply circuit 40 includes M field effect transistors 411-41M, a current value detection part 42, a gate voltage control part 43, and M buffer parts 441-44M. The M field effect transistors 411-41M are provided in parallel in a part of a power supply path between the power source 10 and the load 20. The current value detection part 42 is provided in the power supply path. A value of the current flowing through the power supply path is detected by the current value detection part 42 A voltage value applied to gate terminals of the M field effect transistors 411-41M is controlled by the gate voltage control part 43 such that the detected current value becomes constant.


Inventors:
KIDO YOSHIO
FUTAMORI SHIGEKI
HATA KENJIRO
KUDO HARUO
SUDA KAZUO
Application Number:
JP2007269410A
Publication Date:
May 07, 2009
Filing Date:
October 16, 2007
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
NAT INST FOR MATERIALS SCIENCE
KUDO DENKI KK
International Classes:
G05F1/56; H01F13/00
Domestic Patent References:
JPS5957313A1984-04-02
JPS61220012A1986-09-30
JP2000056844A2000-02-25
JP2006127225A2006-05-18
JP2005352497A2005-12-22
JP2006086316A2006-03-30
JPH08147052A1996-06-07
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Masatoshi Shibata



 
Previous Patent: SEMICONDUCTOR MONITORING DEVICE, COMMUNICATION CONDITION SETTING METHOD OF SEMICONDUCTOR MONITORING ...

Next Patent: プラスチック偏光レンズ及びその製造方法