Title:
POWER TRANSISTOR TEMPERATURE PROTECTIVE CIRCUIT DEVICE
Document Type and Number:
Japanese Patent JP3042256
Kind Code:
B2
Abstract:
PURPOSE: To provide the power device temperature protective circuit device which prevents the thermal destruction of a power device.
CONSTITUTION: A temperature detecting transistor TR 3 which has emitter and base areas electrically insulated and has a certain area is formed on the silicon of the same body as a silicon power TR 2 whose base area and emitter area are formed by the double diffusion process, and a base terminal 9 and an emitter terminal 10 of the TR 3 are connected to a circuit part 12 formed as an independent body, and a base-emitter voltage detecting circuit 19 which detects that the base-emitter voltage reaches a prescribed voltage and a bias resistance 11 which adjusts the voltage offset between the base and the emitter are added.
Inventors:
Katsuhiko Higashiyama
Application Number:
JP12689593A
Publication Date:
May 15, 2000
Filing Date:
May 28, 1993
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H02H5/04; H03F1/52; H03F1/30; H03K17/082; H03K17/08; (IPC1-7): H03F1/52; H03F1/30
Domestic Patent References:
| JP59122104A | ||||
| JP5235654A | ||||
| JP57115008A |
Attorney, Agent or Firm:
Fumio Iwahashi (2 others)