Title:
金属アミジナートを用いる原子層の析出
Document Type and Number:
Japanese Patent JP4988159
Kind Code:
B2
Abstract:
Metal films are deposited with uniform thickness and excellent step coverage. Copper metal films were deposited on heated substrates by the reaction of alternating doses of copper(I) NN'-diisopropylacetamidinate vapor and hydrogen gas. Cobalt metal films were deposited on heated substrates by the reaction of alternating doses of cobalt(II) bis(N,N'-diisopropylacetamidinate) vapor and hydrogen gas. Nitrides and oxides of these metals can be formed by replacing the hydrogen with ammonia or water vapor, respectively. The films have very uniform thickness and excellent step coverage in narrow holes. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices.
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Inventors:
Gordon, Roy Gee.
Rim, Boyon S.
Rim, Boyon S.
Application Number:
JP2004570408A
Publication Date:
August 01, 2012
Filing Date:
November 14, 2003
Export Citation:
Assignee:
President and Fellows of Harvard College
International Classes:
C23C16/455; C07F1/02; C07F1/08; C07F1/10; C07F3/00; C07F5/00; C07F7/28; C07F9/94; C07F13/00; C07F15/00; C07F15/02; C07F15/04; C07F15/06; C23C16/18; C23C16/40; H01L21/285; C23C16/44
Domestic Patent References:
| JP200269088A |
Attorney, Agent or Firm:
Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Satoshi Deno
Nagasaka Tomoyasu
Yoshihiro Kobayashi
Takashi Ishida
Tetsuji Koga
Satoshi Deno
Nagasaka Tomoyasu
Yoshihiro Kobayashi