Title:
PREPARATION OF SEMICONDUCTOR CRYSTAL
Document Type and Number:
Japanese Patent JPS58154238
Kind Code:
A
Abstract:
PURPOSE:To realize uniform growth of crystal by washing a cadmium telluride crystal substrate before it does not yet grow with a tellurium-dissolved solution. CONSTITUTION:After inserting a slider 5 providing a cadmium telluride substrate 8 and a dissolved-solution pot 6 including a containing parts 6a, 6b containing a solution 7b for growth consisting of a tellurium melt 7a, a cadmium mercury telluride and tellurium into the furnace core tube (not illustrated), the specified temperature change is given to such a tube. Before several seconds of the contact temperature of the solution 7b, the tellurium melt 7a is splashed over the substrate 8 by sliding the dissolved-solution pot 6 in order to wash the surface of substrate 8. After several seconds, the tellurium melt 7a is removed from the substrate 8, and the melt 7b for growth is then splashed over the substrate 8. Thereby, holes formed on the cadmium mercury telluride crystal 11 are remarkably reduced and a crystal grows up uniformly.
Inventors:
OOKATA RIYOUJI
NAGAHAMA KOUKI
NAGAHAMA KOUKI
Application Number:
JP3890182A
Publication Date:
September 13, 1983
Filing Date:
March 09, 1982
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L31/04; H01L21/368; H01L31/00; (IPC1-7): H01L31/04
Attorney, Agent or Firm:
Shinichi Kusano