Title:
PRESSURE DETECTOR
Document Type and Number:
Japanese Patent JPH04323529
Kind Code:
A
Abstract:
PURPOSE:To carry out detection under high temperature environment by forming a strain gage for outputting electric signal according to the deformation of a semiconductor diaphragm, on an insulating layer formed on the semiconductor diaphragm, in the side opposed to a metallic diaphragm. CONSTITUTION:An insulating layer 10 is formed by forming an oxide film on a semiconductor diaphragm 6 by thermal oxidation and so on. A polychristalline silicon 12a is formed on the insulating layer 10, which is etched, and an impurity, or boron for example, is added to the part other than etched off, so as to form a plurality of deformation sensitive elements 11a. Strain gages are formed by forming bridge wiring out of metal on these devices. A thin part which will be a diaphragm is formed on the rear surface of the diaphragm 6 by etching, in a correspondent way. Electric insulation in each deformation sensitive elements 11a is solidly retained by the insulating layer 10 even when the surrounding temperature is elevated to no less than 180 deg.C, while no leaf current is generated, and pressure can thus be detected.
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Inventors:
HASE YUJI
BESSHO MIKIO
HIRATA YOSHIAKI
BESSHO MIKIO
HIRATA YOSHIAKI
Application Number:
JP11794791A
Publication Date:
November 12, 1992
Filing Date:
April 23, 1991
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G01L9/04; G01L9/00; G01L23/18; (IPC1-7): G01L9/04; G01L23/18
Attorney, Agent or Firm:
Hiroaki Tazawa (2 outside)
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