PURPOSE: To decrease the influence of static pressure and to obviate breakdown despite exertion of excessive pressure by mounting a bossed pressure detector to a glass base having an approximate coefft. of thermal expansion and providing a clearance between the glass base and the boss.
CONSTITUTION: A silicon oxide film is applied on one surface of a silicon single crystal 50, and a groove 53 is provided on the other surface. A boss 52 is formed by the groove 53, and a stationary base 51 formed of glass is stuck to the side where the boss 52 is formed. A clearance 54 is provided between the glass base 51 and the boss 52. The base 51 is formed of a material having a coefft. of thermal expansion approximate to that of a silicon diaphragm type sensor. Thus breakdown of the detector is obviated despite exertion of excessive pressure.
SHIMAZOE MICHITAKA
TAKAHASHI YUKIO
YAMAMOTO YOSHIKI
MATSUOKA YOSHITAKA
Next Patent: STATIC CAPACITY TYPE PRESSURE SENSOR