To provide a pressure sensor capable of controlling the thickness of an oscillating section to be oscillated by an action of pressure to various thicknesses at high accuracy and a manufacturing method thereof.

The manufacturing method of the pressure sensor 1 includes the steps of: forming an SOI substrate 2 comprising a silicon substrate 4 with an active layer 6 laminated thereon via a BOX layer 5; forming a through-hole 8 in the SOI substrate 2, which penetrates the silicon substrate 4 and the BOX layer 5 in a lump from one side to the other side of the thickness direction thereof, thereby forming a diaphragm 9 in an area of the active layer 6 facing the through-hole 8; forming a movable electrode 10 capable of oscillating with the diaphragm 9 in an upper layer section of the diaphragm 9; forming a recessed part 16 on a sealing substrate 3, the recessed part being formed one step lower than the back of a perimeter section 15 toward the top side; forming a fixed electrode 17 on the bottom of the recessed part 16; and joining the sealing substrate 3 and the SOI substrate 2 with the fixed electrode 17 and the movable electrode 10 facing each other.