PRESSURIZATION TREATMENT DEVICE AND METHOD OF SEMICONDUCTOR

Title:

PRESSURIZATION TREATMENT DEVICE AND METHOD OF SEMICONDUCTOR

Document Type and Number:

Japanese Patent JP2000180068

Kind Code:

A

Abstract:

To provide a device and method for performing the pressurization treatment of a semiconductor that can drastically enhancing the treatment efficiency of the semiconductor and can improve the quality of the treated semiconductor and make uniform the quality.

A support device 15 for supporting a plurality of semiconductor wafers W is provided up and down in a treatment chamber 8 to treat a number of semiconductor wafers W at a time. Also, the support device 15 is surrounded by a casing 18 made of an airtight material. Since heaters 11 and 12 are arranged outside the casing 18, they can shield dust. Also, temperature sensors 21 and 22 for heating and controlling the heaters 11 and 12 are provided in the casing 18, thus accurately detecting temperature.

Inventors:

FUJIKAWA TAKAO
ISHII TAKAHIKO
MASUDA KOJI
KADOGUCHI MAKOTO

Application Number:

JP35780298A

Publication Date:

June 30, 2000

Filing Date:

December 16, 1998

Export Citation:

Click for automatic bibliography generation Help

Assignee:

KOBE STEEL LTD

International Classes:

H01L21/3205; F27B17/00; H01L21/324; (IPC1-7): F27B17/00; H01L21/3205; H01L21/324

Attorney, Agent or Firm:

Toshio Yasuda

Previous Patent: LIFTING MELTING APPARATUS AND PRODUCTION METHOD OF ALLOY

Next Patent: ANTI-FALLING METHOD OF BRICK IN MOLTEN METAL HOLDING CONTAINER