To obtain a stable electric performance inspection with low load probe needle contact and to improve the life of the probe needle at the inspection of the semiconductor device.

The probe needles 2 and 3 are provided on the probe card substrate 1, respectively, corresponding to a plurality of electrode pads 5 provided on the wafer two adjacent semiconductor devices 4 having the same structure. One probe needle 2, the tip shapes of which are roughened probe needle having uneven shape by roughening, when brought into contact with the electrode pads 5 surfaces of the electrode pads 5 are formed into uneven surfaces by roughening the surfaces. The other probe needle 3, the tip shape of which are flat are the probe needles for inspection, performs the electric performance inspection of the semiconductor device 4 by bringing it into contact with the roughened electrode pads 5.