To provide a probe guiding member which has high thermal conductivity and excellent precision workability and is used for inspection of a semiconductor element exhibiting thermal expansion close to that of silicon.
The probe guiding member is prepared by using a BN-AlN compound-sintered compact which contains 37-44 mass% boron nitride, 54-60 mass% aluminum nitride, and 1-4 mass% sintering additive containing yttria and has a relative density of 92% or higher. The probe guiding member has a thermal conductivity of 70 W/mK or higher, a thermal expansion coefficient of 2.5-3.5 ppm/K, and a shore hardness of 45-58. The production method of the probe guiding member uses a raw material comprising aluminum nitride with a maximum grain size of 10 m or lower, boron nitride with a GI value of 3-10, yttria of 1-3 mass%, and alumina of 3 mass% or lower (including 0 mass%) and uses hot press burning with a pressure of 10-30 MPa, a temperature of 1,750-1,900C, and a holding time of 1-3 hr.
YAMAHIRA MAMORU
NISHIKAWA MASATO
| JPH04292467A | 1992-10-16 | |||
| JP2002257853A | 2002-09-11 | |||
| JP2004250264A | 2004-09-09 |
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