PROBE FOR NEAR FIELD LIGHT, GENERATING METHOD FOR NEAR FIELD LIGHT USING THE PROBE, PROBE HAVING THE PROBE, STORAGE UNIT HAVING THE PROBE, SURFACE OBSERVING UNIT, EXPOSURE UNIT, MANUFACTURING METHOD FOR DEVICE, AND MANUFACTURING METHOD FOR THE PROBE HAVING THE PROBE FOR THE NEAR FIELD LIGHT

Japanese Patent JP3817498

B2

PROBLEM TO BE SOLVED: To provide a probe for a near field light capable of generating the near field light efficiently, and generating deformation hardly under a production process, under use or the like, a method for generating the near field light using the probe, a probe having the probe, a storage device having the probe, a surface observation device, an exposure device, a manufacturing method for the device, and the manufacturing method for the probe having the probe for the near field light.
SOLUTION: This probe manufacturing method has a process wherein at least inner face shape is constituted of a cone shape of which the top part is formed into a plane, wherein the probe for the near field light having a through hole is constituted in the top part, or wherein a recess of an inverse pyramid shape surrounded by four faces equivalent to a 111 face by crystal axis anisotropic etching, and constituted of faces 100, of which the bottom face is formed into a plane, is formed on surface of a Si substrate along a face direction 100.

Tomohiro Yamada
Natsuhiko Mizutani

JP2002175105A

September 06, 2006

June 14, 2002

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Canon Inc

G01Q60/22; G01Q70/10; G01Q80/00; G11B7/135; G11B7/1387; G11B7/22; H01J3/14; (IPC1-7): G01N13/14; G01N13/10; G11B7/135; G12B21/06

JP2000171380A
JP2001004520A
JP8262038A
JP2001349818A
JP2002162333A

Tatsuya Nagao

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