Title:
PROCESS FOR DEPOSITING THIN FILM OF CRYSTALLINE SILICON ON GRAPHITE BASEE MATERIAL
Document Type and Number:
Japanese Patent JPS5460291
Kind Code:
A
Abstract:
Processes for the continuous deposition of crystalline silicon on graphite substrates, the silicon being undoped or N- or P-doped and the substrates being useful for photovoltaic cells and other electronic devices, the processes comprising placing crystalline silicon in at least one crucible having a capillary port with a vertical axis in its lower part; bringing the silicon to its melting point; bringing a graphite substrate into contact with the pendant drop formed at the lower mouth of the capillary; moving the substrate at a selected speed in a constant predetermined direction; and removing the substrate coated with the crystalline substance at chosen time intervals.
Inventors:
JIYAN RIKARU
SHIYARURU EKUSUKOFUON
SHIYARURU EKUSUKOFUON
Application Number:
JP10568278A
Publication Date:
May 15, 1979
Filing Date:
August 31, 1978
Export Citation:
Assignee:
UGINE KUHLMANN
International Classes:
C04B35/52; C23C2/00; C30B15/00; C04B41/87; C30B15/06; C30B19/00; C30B29/06; (IPC1-7): C01B31/04; C04B41/06