PURPOSE: To enhance the accuracy of quality control in the manufacture processes of semiconducter device by a method wherein the dosage of the part, where proximity effect is easily generated and the proximity effect is hardly generated, is detected individually, and a decision is given as there was something abnormal in the previous process if the ratio of difference of both dosages against the reference dosage exceeds the prescribed range.

CONSTITUTION: A first dosage detecting means 43 is composed of the reference electrode and the conductive layer of a developing part 30, a current detector 41, and a peak time detector 42, and a second dosage detecting means 46 is composed of a reflection type film-thickness meter 44 and a saturation time detector 45. The difference between the time output of both detectors is converted to a dosage and compared by a dosage comparison part 50, and the difference of dosage is sent to a pattern accuracy evaluation section 60. Whether the difference of dosage is within the prescribed range of designed dosage is judged by the pattern accuracy evaluation section 60, and the difference between the designed dosage and the actual dosage is given to a developing control section 70. As a result, the variation in dosage within the same substrate, the influence of proximity effect and the like are grasped quantitatively, and the accuracy in quality control can be improved.