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Title:
PROCESS FOR MANUFACTURING SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JP2004048080
Kind Code:
A
Abstract:

To provide a process for manufacturing a semiconductor laser employing a nitride-based III-V compound semiconductor in which a high output can be easily ensured.

After the formation of an underlying layer (a p-side clad layer 42) between an active layer 30 and a p-side electrode 52 as a part of a p-type semiconductor layer 40, a p-side contact layer 43 is formed on the p-side clad layer 42. At least one end of the p-side contact layer 43 in the direction of a resonator is then removed selectively by reactive ion etching (RIE) to form a current non-injection region (a damaged layer). Subsequently, a p-side electrode 52 is formed on the p-side contact layer 43 and on an etching region. By the current non-injection region, non-emission recombination is prevented effectively on the end faces 1a and 1b of the resonator and in the vicinity thereof, and COD is prevented.


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Inventors:
ASANO TAKEHARU
KIJIMA SATORU
TOJO TAKESHI
HINO TOMOKIMI
UCHIDA SHIRO
Application Number:
JP2003372976A
Publication Date:
February 12, 2004
Filing Date:
October 31, 2003
Export Citation:
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Assignee:
SONY CORP
International Classes:
H01S5/042; H01S5/323; (IPC1-7): H01S5/042
Domestic Patent References:
JPH1126866A1999-01-29
JPH09293928A1997-11-11
JPH0856047A1996-02-27
JPH11150320A1999-06-02
JPH0537092A1993-02-12
JPH10256645A1998-09-25
JPH08274411A1996-10-18
JPS4994292A1974-09-06
JP2002043692A2002-02-08
JPH0864867A1996-03-08
JPH0969623A1997-03-11
JPH11121877A1999-04-30
JPH1093192A1998-04-10
JPH1168227A1999-03-09
JPH0730194A1995-01-31
JPS4994392A
Attorney, Agent or Firm:
Yoichiro Fujishima



 
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