Title:
枚葉式ウエハ洗浄機においてSOI基板を処理するためのプロセス
Document Type and Number:
Japanese Patent JP7338817
Kind Code:
B2
Abstract:
A method of treating an SOI substrate in a single wafer cleaner includes gripping and rotating the substrate using a system, and dispensing a first liquid solution from a first nozzle in the form of a spray of droplets onto a front face of the SOI substrate. The kinetic energy per unit area of the droplets is lower than or equal to 30 joules/m2.
Inventors:
Sebastian Ledlapier
Loron, Birabeau
Loron, Birabeau
Application Number:
JP2019157281A
Publication Date:
September 05, 2023
Filing Date:
August 29, 2019
Export Citation:
Assignee:
Soitec
International Classes:
H01L21/304
Domestic Patent References:
JP2009530865A | ||||
JP2004235559A | ||||
JP2017188665A | ||||
JP2007027270A | ||||
JP2010056376A |
Foreign References:
WO2006035864A1 | ||||
US20020062840 |
Attorney, Agent or Firm:
Ikeda Adult
Junichiro Sakamaki
Masakazu Noda
Junichiro Sakamaki
Masakazu Noda
Previous Patent: Motor control device and electric power steering device
Next Patent: heat treatment furnace
Next Patent: heat treatment furnace