PURPOSE: To process a compound semiconductor with little damage in a comparatively short time and to directly draw a pattern by using focused accelerating electrons by a method wherein the surface of the compound semiconductor is irradiated with a hydrocarbon gas as a reactive gas and is irradiated with accelerating electrons.
CONSTITUTION: The surface of a compound semiconductor 4 is irradiated with a hydrocarbon gas as a reactive gas and is irradiated with accelerating electrons 11; and thereby, a region, irradiated with the accelerating electrons, of the compound semiconductor 4 is processed. For example, a deflector used to scan an electron beam 11 and its control apparatus are added to a processing apparatus, as shown in the figure, composed of the following: an electron-beam generation part 1 with which a compound semiconductor 4 is irradiated with the electron beam 11 through an electron lens for electron-beam focusing use; a nozzle 2 with which a compound semiconductor 4 is irradiated with a hydrocarbon compound; a vacuum container 10; a stage 5; and an evacuation part 7. GaAs is used as the compound semiconductor 4; CH4 is used as a reactive gas; and a prescribed region is removed from the surface of the compound semiconductor 4 by using the electron beam accelerated at an accelerating voltage of 10kV.
TANETANI MOTOTAKA
SUGIMOTO YOSHIMASA
AKITA KENZO
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