Title:
処理装置及び埋め込み方法
Document Type and Number:
Japanese Patent JP6983103
Kind Code:
B2
Abstract:
Provided is a treatment device having a gas supply unit for supplying a gas, including a high-frequency power application unit for applying high-frequency power for bias voltage generation to a placement base in a treatment container on which a substrate is placed, and a microwave power application unit for applying microwave power into the treatment container. The treatment device also has a control unit, which controls embedding of a SiN film into a recess formed on the substrate by repeating: a microwave plasma film formation treatment comprising applying the microwave power and the high-frequency power for bias voltage generation on the basis of a predetermined film formation condition and supplying a gas containing Si, H and N; and a microwave plasma etching treatment comprising supplying a gas containing H or a gas containing H and Ar on the basis of a predetermined etching condition.
Inventors:
Minoru Honda
Application Number:
JP2018082433A
Publication Date:
December 17, 2021
Filing Date:
April 23, 2018
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/318; C23C16/42; C23C16/511; H01L21/205; H01L21/3065; H01L21/31; H01L21/768; H01L23/522
Domestic Patent References:
| JP7161703A | ||||
| JP2001003185A | ||||
| JP2017224669A | ||||
| JP2005019549A | ||||
| JP11340217A |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito