Title:
PROCESSING METHOD OF FINE PATTERN
Document Type and Number:
Japanese Patent JPS5656636
Kind Code:
A
Abstract:
PURPOSE:To obtain the fine pattern on a material to be processed by a method wherein a metal ion forming an irremovable layer against plasma etching is implanted to form a mask of the fine pattern, and plasma etching is applied by means of said mask. CONSTITUTION:W ion 5 is implanted in a polycrystalline Si film 2 on an SiO2 film 1. From applying next a plasma etching by a gas such as O2, CF4, there is formed an oxidized film 6 of W on the surface, which works as a mask against plasma, therefore a fine pattern can be processed on the polycrystalline Si film 2. According to this constitution, the fine pattern can be formed simply in high precision, and an extra chemical treatment is not required from using no photoresist, thus obtaining etching in a purified state.
Inventors:
MASUKO YOUJI
TAKANO HIROZOU
ASAI SOTOHISA
MIZUGUCHI KAZUO
ABE HARUHIKO
NOMOTO SUMIO
TAKANO HIROZOU
ASAI SOTOHISA
MIZUGUCHI KAZUO
ABE HARUHIKO
NOMOTO SUMIO
Application Number:
JP13389679A
Publication Date:
May 18, 1981
Filing Date:
October 13, 1979
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/302; H01L21/311; H01L21/3115; H01L21/3213; H01L21/3215; (IPC1-7): H01L21/302
Domestic Patent References:
| JPS5461477A | 1979-05-17 |