Title:
PROCESSING METHOD FOR WAFER
Document Type and Number:
Japanese Patent JP2017017098
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a wafer processing method by which a modified layer can be recognized easily.SOLUTION: A processing method for a wafer comprises: a laser processed groove formation step in which a laser beam with a wavelength that is absorbed by a function layer is emitted from the surface side of the wafer, and a laser processed groove is formed while a part not to be processed is left on a dividing schedule line in at least part of an outer peripheral residual area, thereby dividing a functional layer; a modified layer formation step in which a laser beam with a wavelength that is transmitted through a substrate is emitted from the back of the wafer, thereby forming a modified layer, as a breaking initial point, within the substrate; and a dividing step in which external force is applied to the wafer, thereby dividing the wafer into individual device chips. The modified layer formation step comprises: a displacement amount detection step in which the modified layer of the part not to be processed is imaged by infrared imaging means, thereby detecting it as processing-position correction information; and a position correction step in which a laser beam emitting position is corrected on the basis of the processing-position correction information. The modified layer is imaged in a position so as not to overlap the laser processed groove.SELECTED DRAWING: Figure 5
Inventors:
TANAKA KEI
Application Number:
JP2015130058A
Publication Date:
January 19, 2017
Filing Date:
June 29, 2015
Export Citation:
Assignee:
DISCO ABRASIVE SYSTEMS LTD
International Classes:
H01L21/301; B23K26/364; B23K26/53
Domestic Patent References:
| JP2011187479A | 2011-09-22 |
Attorney, Agent or Firm:
Hiroaki Sakai