Title:
PRODUCING METHOD OF ELECTRONIC PARTS
Document Type and Number:
Japanese Patent JPS5530803
Kind Code:
A
Abstract:
PURPOSE:To prevent cracks of SiN film with regard to heat treatment and improve dependability by protecting the surface of a wiring layer of semiconductor element with a silicate glass film of fixed thickness and a SiN film made by the plasma CVD method. CONSTITUTION:The surface of a semiconductor board 1 is covered with a field insulator film 2; after the formation of an electrode wiring layer 3 of Al, etc. with a surface pattern, a silicate glass film 4 is formed with the thickness of 0.1-0.3mum; thereupon is formed a SiN film 5 of 1.0-2.0mum at more than 250 deg.C by plasma to be a surface protector film. Silicate glass has an effect of preventing the roughs of the SiN film in a scribe area at the time of plasma etching. The above structure, where the film thickness is limited, prevents the generation of cracks of the SiN film.
Inventors:
ARAOKA MANABU
SAKAI HIDEO
YOSHIMI TAKEO
SAKAI HIDEO
YOSHIMI TAKEO
Application Number:
JP10271678A
Publication Date:
March 04, 1980
Filing Date:
August 25, 1978
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/283; H01L21/314; H01L21/316; H01L21/318; (IPC1-7): H01L21/283; H01L21/314; H01L21/318