Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3287557
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method, utilizing a crystalline silicon film containing no nickel element and obtained through low-temperature thermal crystallization by forming the silicon film, in such a way that the film is divided into two layers.
SOLUTION: A crystalline silicon film 303 is obtained by forming a nickel- containing layer on an amorphous silicon film, formed on a substrate 302 and heat-treating the silicon film and layer for four hours at 550°C. Then another amorphous silicon film is formed on the obtained silicon film 303. After the amorphous silicon film is heat-treated for four hours at 550°C, another crystalline silicon film 304 can be obtained. Finally, a TFT(thin-film transistor) is manufactured by forming an island-like silicon film by performing patterning through the use of the crystalline silicon film 304 as an active layer and forming a gate electrode on the island-like silicon film, and then implanting an N-type impurity into the crystalline island-like silicon film by an ion doping method.
Inventors:
Masahiko Hayakawa
Application Number:
JP2000183014A
Publication Date:
June 04, 2002
Filing Date:
June 07, 1994
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/20; H01L21/336; (IPC1-7): H01L21/20; H01L21/336; H01L29/786
Domestic Patent References:
| JP4196311A | ||||
| JP2140915A | ||||
| JP3280420A |