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Patent Searching and Data


Title:
PRODUCTION OF COMPOSITION FOR FORMING FILM, COMPOSITION FOR FORMING FILM AND MATERIAL FOR FORMING INSULATING FILM
Document Type and Number:
Japanese Patent JP2001040283
Kind Code:
A
Abstract:

To obtain the subject composition useful as an interlayer dielectric in a semiconductor element, etc., having a low dielectric constant and mechanical strength of coating film and long-term preservability of solution by hydrolyzing a specific compound and a specified metal chelate compound in the presence of an acid catalyst in a fixed solvent.

(A) One or more compounds selected from the group consisting of (i) a compound of formula I (R1 is H, F or a monofunctional organic group; R2 is a monofunctional organic group; (a) is 0-2) such as trimethoxysilane, etc., and (ii) a compound of formula II [R3 to R6 are each a monofunctional organic group; b and c are each 0-2; R7 is O, (CH2)n (n is 1-6); d is 0 or 1] such as hexamethoxydisiloxane, etc., and (B) a chelate compound of formula III (R8 is a chelating agent; M is metal atom; R9 is a 2-5C alkyl or a 6-20C aryl; f is a valence of M; e is an integer of 1-f) such as triethoxy.mono(acetylacetonato) titanium, etc., are hydrolyzed in the presence of an acid catalyst in a solvent of formula IV (R10 and R11 are each H or a 1-4C alkyl; R12 is an alkylene; g is 1 or 2) to give the objective composition for forming a film.


Inventors:
NISHIKAWA MICHINORI
TSUNODA MAYUMI
EBISAWA MASAHIKO
HAKAMAZUKA SATOKO
YAMADA KINJI
Application Number:
JP21561599A
Publication Date:
February 13, 2001
Filing Date:
July 29, 1999
Export Citation:
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Assignee:
JSR CORP
International Classes:
C07F7/04; C07F7/12; C07F7/18; C08G77/08; C09D5/25; C09D183/02; C09D183/04; C09D185/00; H01L21/312; H01L21/316; H01L23/522; H01L21/768; (IPC1-7): C09D183/02; C08G77/08; C09D5/25; C09D183/04; C09D185/00; H01L21/312; H01L21/316; H01L21/768