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Patent Searching and Data


Title:
PRODUCTION OF COMPOUND SEMICONDUCTOR CRYSTAL
Document Type and Number:
Japanese Patent JPH06271386
Kind Code:
A
Abstract:

PURPOSE: To decrease fluctuations in compsns. by detecting the start of a prescribed synthesis reaction by the output of an optical sensor and controlling the power feed to a heater and the temp. with high accuracy.

CONSTITUTION: A crucible 3 contg. ≥2 volatile elements, such as As and Ga, and a sealant is placed on a revolving shaft 4 arranged in a high-pressure vessel 1 and after the inside of the vessel 1 is filled with N2, etc., the control of the power feed to the heater 2 is started by a controller 7 to feed power to the heater 2 until about ≤15°C/min heating up speed is attained. The inside of the crucible 3 is maintained at about 800°C and the synthesis reaction of the As and the Ga is effected to generate light by the heat generation of the reaction. The light is detected by the optical sensor 9 mounted on a peep window 8 and the power feed to the heater 2 is controlled by the controller 7. A seed crystal 6 is brought into contact with the surface of the raw material melt and while the revolving shaft 4 and the pulling up shaft 7 are relatively rotated, the pulling up shaft 5 is gradually pulled up. The compd. semiconductor crystal by a liquid ; sealed Czochralski method is thus produced.


Inventors:
OTANI SOICHIRO
KANO MANABU
TANAKA TAKANORI
SASAKI YOSHINOBU
Application Number:
JP6051593A
Publication Date:
September 27, 1994
Filing Date:
March 19, 1993
Export Citation:
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Assignee:
JAPAN ENERGY CORP
International Classes:
C30B15/20; C30B27/02; C30B29/42; H01L21/208; (IPC1-7): C30B15/20; C30B27/02; C30B29/42; H01L21/208
Attorney, Agent or Firm:
Hiroshi Arafune (1 person outside)