PURPOSE: To lessen the generation of dislocations induced by dissociation by suppressing the dissociation of a constituting element from a crystal surface during pulling up of the compd. semiconductor crystal by a liquid sealed pulling up method.
CONSTITUTION: A jig 6 for dividing a space enclosed by the surface of a liquid sealant 3 covering a GaAs melt 2 and the inside wall surface of a crucible 1 is installed to the upper part in this crucible 1. A seed crystal 4 is lowered through a through-hole 6a of this jig 6 and is brought into contact with the GaAs melt 2; thereafter, this seed crystal is gradually pulled up, by which a GaAs single crystal 5 is grown. Since the space above the liquid sealant 3 is held closed by the jig 6, the heat convection of the atmosphere above the liquid sealant 3 is lessened and the dissociation of the As element from the surface of the GaAs single crystal 5 decreases.
SHIBATA MASATOMO
KUMA SHOJI
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